Shin-Etsu MicroSi’s positive photoresist has been formulated to provide extraordinary results. The properties of these resist’s include straight vertical profiles, outstanding depth of focus, etch resistance for aggressive process environments, outstanding plating performance, superior adhesion, low optical absorption and high aspect ratio. The exceptional properties of SIPR are due to a one component photoresist in which the DNQ is bonded to the main resin. SIPR photoresists are widely utilized in semiconductor, GaAs, thin film head, MEMS, bump and other specialty applications.

Shin-Etsu MicroSi’s SIPR 3251 resist is formulated for Super resolution G/I-line broadband with printing capability of less than 250 nm isolated line and semi-dense lines in 1-6 um thick photoresist additionally this resist can be used in the 10-20µm range. This photoresist is widely utilized in Semiconductor, thin film head, MEMS, microelectronics applications that require superior process latitude for wet etch, dry etch and RIE environment. It can be developed using TMAH or KOH developer.

Technical Data:
2µm 269KB
4µm 162KB
6µm 55KB
10-20µm 409KB

Shin-Etsu MicroSi’s SIPR 9740 resist is formulated for high resolution G/I-line broadband with printing capability of less than 300nm isolated line and semi-dense lines in 1-15 um thick photoresist. This photoresist is widely utilized in Semiconductor, MEMS, thin film head and microelectronics applications that require superior process latitude for lift-off, plating, wet etching, and RIE. It can be developed using TMAH or KOH developer.

SEPR 9740 479KB

Shin-Etsu MicroSi’s SIPR 9332 resist is formulated for high temperature stability for G/I-line broadband with printing capability. This photoresist is widely utilized in Semiconductor, MEMS, thin film head and microelectronics application that require high thermal stability for ion implantation and dry etching environment. It can be developed using TMAH or KOH developer.

Shin-Etsu MicroSi’s SIPR 9361 resist is formulated for high resolution G/I-line broad band with printing capability of less than 1 um isolated line and high profile images in 6 um thick film photoresist. This photoresist is widely used in semiconductor, MEMS and thin film head for passivation, stress buffer layer and permanent insulation layer that require high cross linking and low thermal expansion properties. It can be developed using TMAH or KOH developer.

SEPR 9361 151KB

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