Shin-Etsu is constantly adding to our Photoresist product line; please open the 
Deep UV Road Map (PDF 115KB) to examine where we are going.

• 110mm hole; 0.7-0.8um DOF @0.68NA & Ann. Ill
• 120mm hole; 0.3-0.4um DOF @0.68NA & conv. Ill
• 80mm hole; 0.25um DOF @0.85NA & Ann. Ill   G28(Dyed) is optimized for thin film process

Etching Resistant

• Etching rate: Same as 248 resist
• After Etch Roughness: Same-Better than 248 resist still smoother with thermal flow

Thermal Flow available

• 100-90mm hole is achieved, 100mm hole DOF>0.5um @0.68NA 

SAIL-G 790KB
Deep UV 345KB
SAIL-X108 151KB
SAIL-KrF 262KB

Shin-Etsu MicroSi offers thick and thin 248nm excimer resist for specialty applications. These resists are formulated for either super high resolution or very high aspect ratios. 

Shin-Etsu MicroSi’s SEPR I032 resist is formulated for high resolution, straight side wall profiles with printing capability of less than 250 nm isolated trenches and semi-dense lines in 4 µm thick film photoresist. This photoresist is widely used in TFH industries for NiFe and Cu substrates.

SEPR I032 203KB

Shin-Etsu MicroSi’s SEPR I051 resist is formulated for super resolution, straight side wall profiles with printing capability of less than 200 nm isolated trenches and semi-dense lines in 5 um thick film photoresist. This photoresist is widely used in TFH industries for NiFe and Cu substrates.

SEPR I051 Cu 251KB
SEPR I051 Ni Fe 956KB

Shin-Etsu MicroSi’s SEPR I801/I803 resist is formulated for extremely high resolution, with printing capability of less than 65 nm isolated lines and dense lines in 300nm thin film photoresist. This photoresist is widely utilized in Semiconductor and TFH Reader applications that require the highly complex etch resistance property in the dry etching environment.

SEPR I803 408KB
SEPR I803D vs SEPR-I801 111KB

Back To Top ^