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SINR 3110 & 3170 616KB
I-line; G-line; Broadband Negative application

Shin-Etsu MicroSi offers thick and thin negative tune SINR resist for stress buffer and passivation applications.

  SINR 3110/3170

Shin-Etsu MicroSi’s SINR 3110/3170 siloxane resist is formulated for greater than one to one aspect ratios in 1 to 75um thick resist films. This photoresist is widely used in semiconductor and MEMS for passivation and stress buffer application that require high cross linking and low thermal expansion properties. It can be developed using IPA.

SINR 3110 & 3170 616KB