I-line; G-line; NOVOLAK, and Chemically Amplified Resists

I-line; G-line; Broad band SIPR

Shin-Etsu MicroSi’s positive DNQ photoresist has been formulated to provide extraordinary results. The properties of these resists include straight vertical profiles, outstanding depth of focus, etch resistance for aggressive process environments, outstanding plating performance, superior adhesion, low optical absorption and high aspect ratio. The exceptional properties of SIPR are due to a one component photoresist in which the DNQ photoresist is bonded to the main resin. SIPR photoresists are widely utilized in semiconductor, GaAs, thin film head, MEMS, bump and other specialty applications.

SIPR 3251

Shin-Etsu MicroSi’s SIPR 3251 I-line photoresist and G-line photoresist have a printing capability of less than 250 nm isolated line and semi-dense lines in 1-6 um thick photoresist. Additionally, these resists can be used in the 10-20µm range. This DNQ photoresist is widely utilized in Semiconductor, thin film head, MEMS, microelectronics applications that require superior process latitude for wet etch, dry etch and RIE environment. It can be developed using TMAH or KOH developer.

Technical Data:
2µm 269KB
4µm 162KB
6µm 55KB
10-20µm 409KB

SIPR 9740

Shin-Etsu MicroSi’s SIPR 9740 I-line photoresist and G-line photoresist have a printing capability of less than 300nm isolated line and semi-dense lines in 1-15 um thick photoresist. This DNQ photoresist is widely utilized in Semiconductor, MEMS, thin film head and microelectronics applications that require superior process latitude for lift-off, plating, wet etching, and RIE. It can be developed using TMAH or KOH developer.

SEPR 9740 479KB

SIPR 9332

Shin-Etsu MicroSi’s SIPR 9332 I-line photoresist and G-line photoresist have a printing capability. This DNQ photoresist is widely utilized in Semiconductor, MEMS, thin film head and microelectronics application that require high thermal stability for ion implantation and dry etching environment. It can be developed using TMAH or KOH developer.

SIPR 9361

Shin-Etsu MicroSi’s SIPR 9361 I-line photoresist and G-line photoresist have a printing capability of less than 1 um isolated line and high profile images in 6 um thick film photoresist. This DNQ photoresist is widely used in semiconductor, MEMS and thin film head for passivation, stress buffer layer and permanent insulation layer that require high cross linking and low thermal expansion properties. It can be developed using TMAH or KOH developer.

SEPR 9361 151KB

Chemically Amplified

Shin-Etsu MicroSi’s offers thick and thin Chemically Amplified positive SIPR I-line photoresist for specialty application. This I-line photoresist film is formulated for high thermal and high chemical stabilities.

SIPR 7120/7121

Shin-Etsu MicroSi’s SIPR 7120/7121 I-line photoresist film is formulated for high resolution, single coat, straight side wall profiles with printing capability of less 3 um trenches and isolated contact hole/stud in 3-100 um thick film I-line photoresist. This I-line photoresist is widely used in MEMS, bumps, thin film head and other specialty applications that require superior thermal/chemical stability with excellent photo speed capability for extremely aggressive plating and dry etching environment. The I-line photoresist can be developed using TMAH or KOH developer.

 

SIPR 7120 90KB
SIPR 7121  91KB