Photoresist – Shin-Etsu MicroSi

SEPR I803D vs SEPR-I801

Product Description

SEPR-I803D Dry-Etch Resistance Data

Film Thickness:250 nm

Prebake: 110°Cx90 sec

Exp.: 40mJ/cm2 (NSR-S203B , NA = 0.68, σ = 0.75) Mask: 200nm (Line Space =1/10)

Focus: -0.3µm (Best Focus)

PEB: 110°C x 90 sec Dev.: 60 sec x 1 puddle (SSFD-179N [TMAH = 1.79%])

 

SEPR-I801 Dry-Etch Resistance Data

Film Thickness:250 nm

Prebake: 110°Cx90 sec

Exp.: 30mJ/cm2 (NSR-S203B , NA = 0.68, σ = 0.75) Mask: 200nm (Line Space =1/10)

Focus: -0.3µm (Best Focus) PEB: 110°C x 90 sec Dev.: 60 sec x 1 puddle (SSFD-179N [TMAH = 1.79%])