Lithography

Drawing upon the extensive, electronic, lithography material expertise developed from our chemical manufacturing field, Shin-Etsu offers the latest high-quality and high-performance KrF photoresists, ArF photoresists, F2 photoresists, spin-on hardmasks, and other lithography materials related to the semiconductor production process.

Our line of lithography material products employ a variety of methods in semiconductor applications connected to the resist process. Whether it’s ArF photoresists, spin-on hardmasks, thin resist films, or lithographic etching, MicroSi can deliver quality lithography material that competes with other similar products in the industry.

Shin-Etsu MicroSi offers thick and thin 248nm excimer DUV resist for specialty applications. These deep UV resists are formulated for either super high resolution or very high aspect ratios.

Shin-Etsu MicroSi’s thick film positive DNQ photoresists have been formulated to provide extraordinary lithography results. The properties of these resists include straight vertical profiles, outstanding depth of focus, etch resistance for aggressive process environments, outstanding plating performance, superior adhesion, low optical absorption and high aspect ratio. The exceptional properties of SIPR are due to a one component photoresist in which the DNQ photoresist is bonded to the main resin. SIPR photoresists are widely utilized in semiconductor, GaAs, thin film head, MEMS, bump and other specialty applications.

Shin-Etsu manufactures a broad range of photoimageable dielectric materials for advanced packaging applications, wafer-level packaging, and 3D integration. These include photosensitive dielectric materials for redistribution wiring (RDL) and stress buffer applications, TSV filling, and permanent wafer bonding. Also, dielectric materials for D2D (die-to-die) and D2W (die-to-wafer) bonding, as well as wafer-level overmolding, temporary bonding materials that enable wafer thinning, and photoresists for copper pillar plating and other micro-interconnects.

CEM (Contrast Enhancement Material) is a photo-bleachable material, water soluble layer which is initially opaque to the exposure wavelength(s), but it becomes nearly transparent (»90% transmission) upon exposure. Contrast enhancement material is spun onto the photoresist surface. After conventional exposure, the CEM layer is removed with DI water followed by the resist developing. Because of the presence of the bleachable material, the resist contrast is dramatically improved. This CEM bleachability depends on the film thickness, photochemical properties of the CEM and the dose required to expose the resist.

Our HMDS and HMDS with DEATS adhesion promoters are used to enhance the bonding of photoresist to a wafer substrate surface. Shin-Etsu MicroSi’s MicroPrime™ adhesion promoter line readily reacts with the substrate material removing adsorbed water and reducing surface energy. The water repellent hydrophobic interface resulting from the adhesion promoter prevents etchants from undercutting the photoresist.

PR1P and PR20P are spin-on-bake adhesion promoters which improves the photoresist adhesion to challenging metal surface such as Copper or gold. PR1P and PR20P reduces the surface tension to increase the adhesion of the photoresist eliminating the undercut during subsequent electroplating, wet and dry chemical etching processes.