Drawing upon the extensive, electronic, lithography material expertise developed from our chemical manufacturing field, Shin-Etsu offers the latest high-quality and high-performance KrF photoresists, ArF photoresists, F2 photoresists, spin-on hardmasks, and other lithography materials related to the semiconductor production process.

Our line of lithography material products employ a variety of methods in semiconductor applications connected to the resist process. Whether it’s ArF photoresists, spin-on hardmasks, thin resist films, or lithographic etching, MicroSi can deliver quality lithography material that competes with other similar products in the industry.

Shin-Etsu MicroSi offers thick and thin 248nm excimer DUV resist for specialty applications. These deep UV resists are formulated for either super high resolution or very high aspect ratios.

Shin-Etsu MicroSi’s positive DNQ photoresist has been formulated to provide extraordinary results. The properties of these resists include straight vertical profiles, outstanding depth of focus, etch resistance for aggressive process environments, outstanding plating performance, superior adhesion, low optical absorption and high aspect ratio. The exceptional properties of SIPR are due to a one component photoresist in which the DNQ photoresist is bonded to the main resin. SIPR photoresists are widely utilized in semiconductor, GaAs, thin film head, MEMS, bump and other specialty applications.

Shin-Etsu manufactures a broad range of photoimageable dielectric materials for advanced packaging applications, wafer-level packaging, and 3D integration. These include photosensitive dielectric materials for redistribution wiring (RDL) and stress buffer applications, TSV filling, and permanent wafer bonding. Also, dielectric materials for D2D (die-to-die) and D2W (die-to-wafer) bonding, as well as wafer-level overmolding, temporary bonding materials that enable wafer thinning, and photoresists for copper pillar plating and other micro-interconnects.

CEM (Contrast Enhancement Material) is a photo-bleachable material, which is initially opaque to the exposure wavelength(s), but becomes nearly transparent (»90% transmission) upon exposure.  Contrast enhancement material is applied to the photoresist surface. After conventional exposure, the layer is removed with DI water pre-wet and the resist developed in the ordinary way. Because of the presence of the bleachable material the contrast enhancement definition of the illumination that reaches the photoresist is increased. This contrast enhancement definition depends on the photochemical properties of the CEM and the dose required to expose the resist.

Our PGMEA, DEATS, and HMDS adhesion promoter is used to enhance the bonding of photoresist to a silicon dioxide surface. Shin-Etsu MicroSi’s MicroPrime™ PGMEA, DEATS, and HMDS adhesion promoter line readily reacts with the substrate material removing absorbed water and reducing surface energy. The water repellent hydrophobic interface resulting from the adhesion promoter prevents etchants from undercutting the photoresist.