High Hardness Thermal Interface Silicone Rubber Pad Materials
Shin-Etsu Chemical’s High Hardness TC pad series offers a high thermal conductivity and a low thermal resistance solution that outperforms common organic rubbers and plastics.
As demands for faster electronic devices increase, typically so does the amount of heat generated, requiring the need for higher degree of silicone hardness. If heat cannot escape efficiently, the performance of the device tends to degrade. That is why Shin-Etsu Chemical’s thermal interface, high hardness materials are consistently utilized in the electronics industry and are considered an important tool in meeting higher performance targets for next generation devices.
Features
Shin-Etsu Chemical’s High Hardness TC Pad Series Offers the following characteristics:
- Silicone-based, thermal interface, high hardness materials that contain a high percentage of thermally conductive fillers.
- Exhibit outstanding thermal performance and stability when filling the gap between the heat-generating device and its corresponding heat sink.
- Designed to dissipate heat and provide electrical insulation for power transistors, power modules, CPU’s, GPU’s, NorthBridge and other electrical components.
- Available in several different silicone hardness depths, allowing these high hardness materials to be used in applications where the two mating surfaces of the assembly are either irregular or non-coplanar.
- A wide usable temperature range
- Easily applied and removed as a temporary attachment.
- High heat dissipation ability due to the use of Boron Nitride compounds.
- Silicone hardness materials have excellent tear strength due to glass cloth reinforcement.
Typical Properties
Parameter | Unit | Test Method | TC-CG | TC-BG | |||||||
20CG | 30CG | 45CG | 80CG | 20BG | 30BG | 45BG | 80BG | ||||
Color | – | – | Light reddish Brown | W hite | |||||||
Thickness | mm | – | 0.20 | 0.30 | 0.45 | 0.80 | 0.20 | 0.30 | 0.45 | 0.80 | |
Thermal Conductivity | W /m-K | ISO-22007-2 | 1.7 | 7.3 | |||||||
Reinforced layer | – | – | Fiberglass | Fiberglass | |||||||
Density | g/cm3 | JIS K 6249 | 2.5 | 1.5 | |||||||
Hardness | Durometer A | JIS K 6249 | 90 | 90 | |||||||
Tensile Strength | MPa | JIS K 6249 | 25.9 | 24.1 | 20.4 | 9.3 | 51.0 | 49.0 | 14.0 | ||
Tear Strength | kN/m | JIS K 6249 | 70 | 81 | 70 | 24 | 197 | 223 | 209 | 54 | |
Elongation | % | – | – | – | |||||||
Dielectric Breakdown Voltage | kV | JIS K 6249 | 5 | 7 | 10 | 19 | 7 | 12 | 16 | 21 | |
Dielectric Strength | kV | JIS C 2110 | 2 | 3 | 5 | 10 | 2 | 5 | 7 | 12 | |
Volume Resistivity | TΩ-m | JIS K 6249 | 1.8 | 1.2 | 1.0 | 8 | 10 | 9 | 11 | ||
Dielectric Constant | 50Hz | – | JIS K 6249 | 3.8 | 4.2 | 4.3 | 3.0 | 3.1 | 2.9 | ||
1kHz | – | 3.8 | 4.2 | 4.3 | 3.0 | 3.1 | 2.9 | ||||
1MHz | – | 3.8 | 4.2 | 4.3 | 3.0 | 3.1 | 2.9 | ||||
Dielectric Dissipation Factor | 50Hz | – | JIS K 6249 | 7×10-3 | 6×10-3 | 5×10-3 | 3×10-3 | 5×10-3 | 9×10-3 | ||
1kHz | – | 4×10-3 | 3×10-3 | 2×10-3 | 5×10-3 | ||||||
1MHz | – | 4×10-3 | 3×10-3 | 2×10-3 | |||||||
Thermal Resistance with TO-3P transistor | °C/W | Shin-Etsu Method | 0.48 | 0.70 | 1.00 | 1.30 | 0.11 | 0.26 | 0.35 | 0.46 | |
Flame-Retardance | – | UL-94 | V-0 | V-0 | |||||||
Low-molecular weight siloxane content | ppm | Shin-Etsu Method | 10>(ΣD3-10) | 10>(ΣD3-10) | |||||||
Stock Size | Sheet | mm | – | 320×1000 | 300×1000 | 210x270 | |||||
Roll | – | – | – | – |
Handling and Storage Precautions
- Products should be stored in a dry place out of direct sunlight.
- Avoid contact with residual solvents or oils as they may deteriorate the properties of the product.
- For better results, the substrate surface should be cleaned and dried to remove any dirt, moisture, or oils before application.