Low Hardness Thermal Interface Silicone Rubber Pad Materials
Shin-Etsu Chemical’s Low Hardness TC pad series offers a high thermal conductivity and a low thermal resistance solution that outperforms common organic rubbers and plastics.
As demands for faster electronic devices increase, typically so does the amount of heat generated. If heat can not escape efficiently, the performance of the device tends to suffer. That is why Shin-Etsu Chemical’s thermal interface materials are consistently utilized in the electronics industry and are considered an important tool in meeting higher performance targets for next generation devices.
Features
Shin-Etsu Chemical’s Low Hardness TC Pad Series Offers the following characteristics:
- Silicone-based thermal interface material that contains a high percentage of thermally conductive fillers.
- Exhibit outstanding thermal performance and stability when filling the gap between the heat-generating device and its corresponding heatsink.
- Designed to dissipate heat and provide electrical insulation for power transistors, power modules, CPU’s, GPU’s, NorthBridge and other electrical components.
- Available in several different thicknesses, and various hardnesses, allowing the materials to be used in applications where the two mating surfaces of the assembly are either irregular or non-coplanar.
- A wide usable temperature range, can assist in the dampening vibrations within the assembly.
- Easily applied and removed as a temporary attachment.
Typical Properties
| Parameter | Unit | Test Method | TC-SP-1.7 | TC-SPA-3.0 | TC-HSV-1.4 | TC-CAS-5 | TC-CAS-10 |
| Color | – | – | Gray/Reddish brown | Gray | Gray | Gray | Gray |
| Sheet Size | mm | – | 300×400 | 300×400 | 300×400 | 300×400 | 300×400 |
| Structure | – | – | Composite | Single layer | Single layer | Single layer | Single layer |
| Thickness | mm | – | 0.5 – 5.0 | 0.5 – 3.0 | 0.5 – 3.0 | 0.5 – 3.0 | 0.5 – 3.0 |
| Density | g/cm3 | JIS K 6249 | 2.3 | 2.4 | 2.5 | 1.9 | 1.9 |
| Hardness | – | Asker C | 2 | 4 | 25 | 5 | 10 |
| Dielectric Breakdown Voltage @ 1mm | kV | JIS K 6249 | 20 | 0.24 | 23 | 22 | 22 |
| Thermal Conductivity | W /m-K | ISO-22007-2 | 1.5 | 2.3 | 1.2 | 1.8 | 1.8 |
| Thermal Resistance @ 1mm | °C/W | Shin-Etsu Method | 1.00 | 0.42 | 1.08 | 0.63 | 0.65 |
| Flame-Retardance | – | UL-94 | V-0 | V-0 | V-0 (Shin-Etsu test) | ||
| Low-molecular weight siloxane content | ppm | Shin-Etsu Method | 200 (ΣD3-10) | 260 (ΣD3-10) | TBD (ca. 200 (ΣD3-10)) | ||
| Parameter | Unit | Test Method | TC-CAB-5 | TC-CAB-10 | TC-CAD-5 | TC-CAD-10 | TC-CAT-10 | TC-CAT-20 |
| Color | – | – | Pink | Pink | Light Red/Purple | Light Red/Purple | Gray | Gray |
| Sheet Size | mm | – | 300×400 | 300×400 | 300×400 | 300×400 | 300×400 | 300×400 |
| Structure | – | – | Single layer | Single layer | Single layer | Single layer | Single layer | Single layer |
| Thickness | mm | – | 0.5 – 3.0 | 0.5 – 3.0 | 0.5 – 3.0 | 0.5 – 3.0 | 0.5 – 3.0 | 0.5 – 3.0 |
| Density | g/cm3 | JIS K 6249 | 2.2 | 2.2 | 3.0 | 3.0 | 3.2 | 3.2 |
| Hardness | – | Asker C | 5 | 10 | 5 | 10 | 10 | 20 |
| Dielectric Breakdown Voltage @ 1mm | kV | JIS K 6249 | 22 | 22 | 15 | 15 | 15 | 15 |
| Thermal Conductivity | W /m-K | ISO-22007-2 | 2.3 | 2.3 | 3.2 | 3.2 | 4.5 | 4.5 |
| Thermal Resistance @ 1mm | 0.47 | 0.49 | 0.41 | 0.43 | 0.30 | 0.32 | ||
| V-0 (Shin-Etsu test) | ||||||||
| TBD (ca. 200 (ΣD3-10) | ||||||||
Handling and Storage Precautions
- Products should be stored in a dry place out of direct sunlight.
- Avoid contact with residual solvents or oils as they may deteriorate the properties of the product.
- For better results, the substrate surface should be cleaned and dried to remove any dirt, moisture, or oils before application.
