High Hardness Thermal Interface Silicone Rub Pad Materials

Shin-Etsu Chemical’s High Hardness TC pad series offers a high thermal conductivity and a low thermal resistance solution that outperforms common organic rubbers and plastics.

As demands for faster electronic devices increase, typically so does the amount of heat generated, requiring the need for higher degree of silicone hardness. If heat cannot escape efficiently, the performance of the device tends to degrade. That is why Shin-Etsu Chemical’s thermal interface, high hardness materials are consistently utilized in the electronics industry and are considered an important tool in meeting higher performance targets for next generation devices.


Shin-Etsu Chemical’s High Hardness TC Pad Series Offers the following characteristics:

  • Silicone-based, thermal interface, high hardness materials that contain a high percentage of thermally conductive fillers.
  • Exhibit outstanding thermal performance and stability when filling the gap between the heat-generating device and its corresponding heat sink.
  • Designed to dissipate heat and provide electrical insulation for power transistors, power modules, CPU’s, GPU’s, NorthBridge and other electrical components.
  • Available in several different silicone hardness depths, allowing these high hardness materials to be used in applications where the two mating surfaces of the assembly are either irregular or non-coplanar.
  • A wide usable temperature range
  • Easily applied and removed as a temporary attachment.
  • High heat dissipation ability due to the use of Boron Nitride compounds.
  • Silicone hardness materials have excellent tear strength due to glass cloth reinforcement.


Parameter Unit Test Method TC-CG TC-BG
20CG 30CG 45CG 80CG 20BG 30BG 45BG 80BG
Color Light reddish Brown W hite
Thickness mm 0.20 0.30 0.45 0.80 0.20 0.30 0.45 0.80
Thermal Conductivity W /m-K ISO-22007-2 1.7 7.3
Reinforced layer Fiberglass Fiberglass
Density g/cm3 JIS K 6249 2.5 1.5
Hardness Durometer A JIS K 6249 90 90
Tensile Strength MPa JIS K 6249 25.9 24.1 20.4 9.3 51.0 49.0 14.0
Tear Strength kN/m JIS K 6249 70 81 70 24 197 223 209 54
Elongation %
Dielectric Breakdown Voltage kV JIS K 6249 5 7 10 19 7 12 16 21
Dielectric Strength kV JIS C 2110 2 3 5 10 2 5 7 12
Volume Resistivity TΩ-m JIS K 6249 1.8 1.2 1.0 8 10 9 11
Dielectric Constant 50Hz JIS K 6249 3.8 4.2 4.3 3.0 3.1 2.9
1kHz 3.8 4.2 4.3 3.0 3.1 2.9
1MHz 3.8 4.2 4.3 3.0 3.1 2.9
Dielectric Dissipation Factor 50Hz JIS K 6249 7×10-3 6×10-3 5×10-3 3×10-3 5×10-3 9×10-3
1kHz 4×10-3 3×10-3 2×10-3 5×10-3
1MHz 4×10-3 3×10-3 2×10-3
Thermal Resistance with TO-3P transistor °C/W Shin-Etsu Method 0.48 0.70 1.00 1.30 0.11 0.26 0.35 0.46
Flame-Retardance UL-94 V-0 V-0
Low-molecular weight siloxane content ppm Shin-Etsu Method 10>(ΣD3-10) 10>(ΣD3-10)
Stock Size Sheet mm 320×1000 300×1000 210x270

AV type with Adhesive on single-sided

Parameter Unit Test Method TC-CG TC-BG
Thermal Resistance with TO-3P transistor °C/W Shin-Etsu Method 0.93 1.39 1.57 1.92 0.49 0.73 0.85 0.92
Flame-Retardance UL-94 V-0 V-0
Stock Size Sheet mm 300×1000 200x260
Roll 320mmx50m 320mmx25m


  • Products should be stored in a dry place out of direct sunlight.
  • Avoid contact with residual solvents or oils as they may deteriorate the properties of the product.
  • For better results, the substrate surface should be cleaned and dried to remove any dirt, moisture, or oils before application.
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