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SIPR-7610

Shin-Etsu MicroSi’s SIPR 7610 photoresist film is formulated for straight side wall profiles with printing capability of 30um in 120um thick film I-line photoresist. This I-line photoresist is widely used in MEMS, bumps, thin film head and other specialty applications that require superior thermal/chemical stability with excellent photo speed capability for extremely aggressive plating and dry etching environment. The I-line photoresist can be developed using TMAH or KOH developer.

Description

Shin-Etsu MicroSi’s SIPR 7610 photoresist film is formulated for straight side wall profiles with printing capability of 30um in 120um thick film I-line photoresist. This I-line photoresist is widely used in MEMS, bumps, thin film head and other specialty applications that require superior thermal/chemical stability with excellent photo speed capability for extremely aggressive plating and dry etching environment. The I-line photoresist can be developed using TMAH or KOH developer.

 

  • SIPR 7610 (Spin-on Liquid): under 40μm thickness
  • SEPR 7610-DF (Dry Film): 100μm single lamination & over 100μm (multi-lamination)

Additional information

Film Thickness

25μm on Cu
Exposure

NIKON, NSR-2205i11 (NA=0.46, s=0.37), 120 mJ/cm<sup>2</sup>
PEB

110°C X 90 sec
Focus

0μm
SB

120°C/240sec(HP)
Development

50s X 2(TMAH=2.38%)