Shin-Etsu MicroSi’s SIPR 9684N resist is formulated for single layer lift process without using sacrificial underlayers to produce controllable undercut. This I-line positive lift off photoresist is widely used in MEMS, thin film head and other specialty applications that require desired undercut with simple one step process like standard photoresist process parameters. TMAH developer is required.
Shin-Etsu MicroSi’s SIPR 9684N resist is formulated for single layer lift process without using sacrificial underlayers to produce controllable undercut. This I-line positive lift off photoresist is widely used in MEMS, thin film head and other specialty applications that require desired undercut with simple one step process like standard photoresist process parameters. TMAH developer is required.
| Thickness | 3μm |
|---|---|
| PB | 100c/100sec(HP) |
| Exposure | NIKON, NSR-220911(NA=0.63, s=0.60), 375mJ/cm<sup>2</sup> |
| PEB | 120C/90sec(HP) |
| Development | 50s X 2(TMAH=2.38%) |
| Focus | 0μm |