Description
Shin-Etsu MicroSi’s SIPR 9332 I-line/G-line photoresist is designed for applications that require high thermal stability for ion implantation and dry etching environment. Though TMAH developer is preferred, KOH is also acceptable.
SIPR 9332BE10
Shin-Etsu MicroSi’s SIPR 9332 I-line/G-line photoresist is designed for applications that require high thermal stability for ion implantation and dry etching environment. Though TMAH developer is preferred, KOH is also acceptable.
Additional information
| Dehydration Bake | 150°C X 120 sec. |
|---|---|
| HMDS Primed | 23°C X 120 sec. |
| Resist Apply | 10.0μm |
| P.B. | 90°C X 120 sec. |
| Exposure | NSR-1755i7A, NA=0.50, σ=0.6 |
| PEB | None |
| Development | SSFD-238, (2.38% TMAH) 50 sec X 4 times |