SIPR 9361

Shin-Etsu MicroSi’s SIPR 9361 I-line/G-line photoresist has a printing capability of less than 1 um isolated line and high profile images in 6 um thick film photoresist and designed as a permanent insulation layer. This DNQ photoresist is widely used in semiconductor, MEMS and thin film head for passivation, stress buffer layer and permanent insulation layer that require high cross linking and low thermal expansion properties. Though TMAH developer is preferred, KOH is also acceptable.

Description

Shin-Etsu MicroSi’s SIPR 9361 I-line/G-line photoresist has a printing capability of less than 1 um isolated line and high profile images in 6 um thick film photoresist and designed as a permanent insulation layer. This DNQ photoresist is widely used in semiconductor, MEMS and thin film head for passivation, stress buffer layer and permanent insulation layer that require high cross linking and low thermal expansion properties. Though TMAH developer is preferred, KOH is also acceptable.

 

Additional information

Substrate

Silicon

Thickness

3.5μm

Exposure

NIKON NSR1755i7A (Na=0.50, σ=0.60); 90mJ

PEB

None

Prebake

110°C X 120 sec.

Dev.

50sec X 2 puddles (SSFD-238)