SINR 3570M

Based on SINR-3170 chemistry
- Modified for bonding at room temperature
Good adhesion for bonding:
- Chip-to-wafer
- Wafer-to-wafer
- Wafer-to-glass
70%-siloxane content for minimal wafer bowing
Same 180°C/1 hour cure as for SINR-3170
Minimal resist outgassing after wafer bonding

Description

Based on SINR-3170 chemistry
- Modified for bonding at room temperature
Good adhesion for bonding:
- Chip-to-wafer
- Wafer-to-wafer
- Wafer-to-glass
70%-siloxane content for minimal wafer bowing
Same 180°C/1 hour cure as for SINR-3170
Minimal resist outgassing after wafer bonding

Additional information

Siloxane Content (%)	70
Young's Modulus (GPa)	0.15
CTE (ppm/°C)	180
Wafer Warpage (μm)	1.2
Stress on Si (MPa)	0.2
Elongation (%)	40

Product Documents

Photo-Imageable Dielectric Materials for Packaging and Bonding