Shin-Etsu MicroSi’s SIPR 3251 I-line/G-line photoresist has a printing capability of less than 250 nm isolated line and semi-dense lines in 1-6 um thick films. Additionally, these resists can be used in the 10-20µm range. This DNQ photoresist is widely utilized in Semiconductors, thin film heads, MEMS, microelectronics applications that require superior process latitude for wet etch, dry etch and RIE environment. Though TMAH developer is preferred, KOH is also acceptable.
Shin-Etsu MicroSi’s SIPR 3251 I-line/G-line photoresist has a printing capability of less than 250 nm isolated line and semi-dense lines in 1-6 um thick films. Additionally, these resists can be used in the 10-20µm range. This DNQ photoresist is widely utilized in Semiconductors, thin film heads, MEMS, microelectronics applications that require superior process latitude for wet etch, dry etch and RIE environment. Though TMAH developer is preferred, KOH is also acceptable.
| Thickness | 2.0μm |
|---|---|
| PB | 100°C/120 sec. |
| PEB | 110°C X 90 sec |
| Development | 50 sec. X 2 (SSFD-238) |
| Focus | 0μm |
| Substrate | Silicon |