SIPR 9332BE1

Description

Shin-Etsu MicroSi’s SIPR 9332 I-line/G-line photoresist is designed for applications that require high thermal stability for ion implantation and dry etching envShin-Etsu MicroSi’s SIPR 9332 I-line/G-line photoresist is designed for applications that require high thermal stability for ion implantation and dry etching environment. Though TMAH developer is preferred, KOH is also acceptable.ironment. Though TMAH developer is preferred, KOH is also acceptable.

Additional information

Dehydration Bake

150°C X 120 sec.

HMDS Primed

23°C X 120 sec.

Resist Apply

1.185 μm

P.B.

90°C X 120 sec.

Exposure

NSR-1755i7A, NA=0.50, σ=0.6

PEB

120C/90sec(HP)

Development

SSFD-238 (2.38% TMAH) 65 sec.