Description
Shin-Etsu MicroSi’s SIPR 9332 I-line/G-line photoresist is designed for applications that require high thermal stability for ion implantation and dry etching environment. Though TMAH developer is preferred, KOH is also acceptable.
SIPR 9332BE6
Additional information
| Dehydration Bake | 150°C X 120 sec. |
|---|---|
| HMDS Primed | 23°C X 120 sec |
| Resist Apply | 6.0μm |
| P.B. | 90°C X 120 sec. |
| Exposure | NSR-1755i7A, NA=0.50, σ=0.6 |
| PEB | None |
| Development | SSFD-238 (2.38% TMAH) 50sec X 3 times |